Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated
Metal–insulator–metal (MIM) dielectric capacitors (DCs), as one of the crucial and typical components, have been widely used in silicon integrated RF and ICs devices due to their low
In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low-k) materials have been
Metal–insulator–metal (MIM) dielectric capacitors (DCs), as one of the crucial and typical components, have been widely used in silicon integrated RF and ICs devices of a dielectric capacitor with a capacitance density of 6.05 fF 2 m, intended for RF and mixed-signal integrated circuits applications [20]. Boris''s group focused on the
This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM)
For metal-insulator-metal (MIM) capacitors with an amorphous ZrTiO4 film as the dielectric, the impact of top electrode including Ni and Al on electrical stress reliability was
An electrolytic capacitor is a polarized capacitor whose anode or positive plate is made of a metal that forms an insulating oxide layer through anodization.This oxide layer acts as the
Abstract: Metal-insulator–metal (MIM) capacitors are inevitable and critical passive components in analog, mixed-signal, and memory applications. These capacitors occupy nearly 40% of circuit
This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of
The organic dielectric capacitor of a metal foil electrode is made of two layers of plastic film or sheet. Each layer is interspersed with thin aluminum metal foil or sheet, serving
Metal-insulator-metal (MIM) capacitor is an important passive component in RF, analog and mixed signal (RF-AMS) circuits. It takes a large circuit area of integrated circuits (ICs) compared to other passive and active components. This has made a trend to design high capacitance density MIM capacitors with novel dielectric materials. In this
The medium of a dielectric capacitor is a dielectric material, which relies on the polarization of the dipole around the electrode and dielectric interface to store and
This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The
Let''s take a look at three common types of analog integrated circuit capacitors: metal-oxide-metal, metal-insulator-metal, and metal-oxide-semiconductor They are like a parallel plate capacitor, in which metal plates
Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a
The results demonstrate that the dielectric materials with high-k produce the highest capacitance. Results also show that metal-Al2O3 interfaces increase the performance of the MIM capacitors.
This paper presents the fabrication and modeling for capacitance–voltage characteristics of multi-layer metal–insulator–metal capacitors. It is observed that, due the applied electric field, the effective
The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the...
The interface between a dielectric thin film and a metal electrode is studied to improve reliability as well as electrical properties of the metal–insulator– metal (MIM) capacitor in dynamic
The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the
Metalized-film dielectric capacitors provide lump portions of energy on demand. While the capacities of various capacitor designs are comparable in magnitude, their stabilities make a difference. Dielectric breakdowns – micro-discharges – routinely occur in capacitors due to the inevitable presence of localized structure defects.
The interface between a dielectric thin film and a metal electrode is studied to improve reliability as well as electrical properties of the metal–insulator–metal (MIM) capacitor in dynamic random-access memory
In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low-k) materials have been investigated in terms of metal gate area and geometry and thickness of dielectric film effects.Two low-k materials, dense and porous low-k films, were used.Experimental results indicated that the porous low-k
The dielectric in the MOS capacitor has almost always been the silicon dioxide, or oxide, for short, so the standard term is MOS (metal–oxide– semiconductor).The MOS capacitor can be seen as a structure consisting of two heterojunctions:
Metal-film dielectric capacitors provide lump portions of energy on demand. While the capacities of various capacitor designs are comparable in magnitude, their stabilities make a difference. Dielectric breakdowns – micro-discharges – routinely occur in capacitors due to the inevitable presence of localized structure defects.
The basic structure of a capacitor consists of two metal plates separated by a layer of dielectric. Capacitors can be fixed capacitors or variable capacitors. Electrolytic capacitors, otherwise called polarized capacitors, are the most frequently used capacitor type. Capacitors are the most frequently used electronic component after resistors.
Polystyrene is an important metal film capacitor. It has a low dielectric absorption (DA) characteristic which makes it a great choice for sample-and-hold and peak detector applications. Polycarbonate capacitors provide a
Describe the effects a dielectric in a capacitor has on capacitance and other properties; Metal plates in an electronic stud finder act effectively as a capacitor. You place a stud finder with its flat side on the wall and move it
The plates are usually made of metal, and the dielectric material can be any material that can insulate the plates. Dielectrics and capacitors also differ in their properties. Dielectric materials have a property called permittivity, which is a measure of how much the electric field in the material is affected by an external electric field.
Between every capacitor is sandwiched a dielectric, the same capacitors without which your touchscreen would merely be a sheet of glass. But how does an insulator enhance the efficacy of a capacitor? Now, because
The effect of the different dielectric constants (k) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low-k and high-k dielectric materials. The dielectric materials used in this study with high-k are Al2O3 and HfO2, while the low-k dielectric materials are SiO2 and Si3N4.
The dielectric materials used in this study with high-k are Al2O3 and HfO2, while the low-k dielectric materials are SiO2 and Si3N4. The results demonstrate that the dielectric materials with high-k produce the highest capacitance. Results also show that metal-Al2O3 interfaces increase the performance of the MIM capacitors.
The interface between a dielectric thin film and a metal electrode is studied to improve reliability as well as electrical properties of the metal–insulator–metal (MIM) capacitor in dynamic random-access memory (DRAM) devices.
Metal–insulator–metal (MIM) dielectric capacitors (DCs), as one of the crucial and typical components, have been widely used in silicon integrated RF and ICs devices due to their low resistance and low parasitic capacitance [1, 2, 3, 4, 5, 6, 7, 8].
C - Q and C - V characteristic curves of 25 nm Al 2 O 3, TiO 2, and HfO 2 dielectric capacitors. (a – c) The C - Q characteristic curves of three kinds of 25 nm dielectric capacitors, respectively. (d – f) The corresponding C - V characteristic curves of three kinds of 25 nm dielectric capacitors at different frequencies.
The dielectric capacitors based on Al 2 O 3, TiO 2, and HfO 2 with controllable thicknesses are successfully fabricated by ALD, and the thicknesses of the dielectric film are measured with a spectroscopic ellipsometer. The relevant test principle is shown in Figures S2–S5, Supporting Information.
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