High-efficiency dielectric capacitors based on BaTi0.5Hf0
Film dielectric capacitors enabled with large breakdown field strength and high energy density play a key role for compact and integrated power systems. Nevertheless, the
High-Tunable Capacitor Using a Multi-Layer Dielectric Thin Film
In this work, a high tunable capacitor using a multi-layer dielectric of BZN/BST/BZN is designed and characterized for reconfigurable RF applications. By utilizing a
Ba0.6Sr0.4TiO3-Bi1.5Mg1.0Nb1.5O7 composite thin film capacitors
Dielectric measurements indicated that the Ba0.6Sr0.4TiO3-Bi1.5Mg1.0Nb1.5O7 composite thin-film capacitors exhibited medium capacitance of about 442
Ultra-high energy density thin-film capacitors with high power
With the rapid development of electric industry, there are great, needs for advanced electric energy-storage systems, and thus for innovative energy-storage materials
[PDF] Thin film barium strontium titanate capacitors for tunable
In this thesis, the results of intensive electrical characterization, modeling and the design of hardware with thin film tunable capacitors, i.e., dielectric varactors, has been
Insertion Loss in Reflection-Type Microwave Phase Shifter Based
A tunable capacitor based on a ferroelectric thin film grown on a dielectric substrate is a promising component for reconfigurable and tunable devices for numerous RF
Ultra-high energy density thin-film capacitors with high power
Hence, we propose to fabricate ultra-high energy storage thin-film capacitors by using a heterostructure—BSnT (BaSn 0.15 Ti 0.85 O 3)/BST bilayer system. In addition, there
Recent progress in ferroelectric thin film capacitors for high
For example, in hybrid vehicles, through continuous improvement of circuit design, the required operating voltage has been reduced to several hundred volts, and the discharge
Fabrication and characterization of Ba1−xSr1−xTiO3 tunable thin film
Thin Solid Films 259 (1905) 218-224 ELSEVIER Fabrication and characterization of Ba, _ x Sr, _ x Ti03 tunable thin film capacitors Abdelkader bDepartment Outzourhit
Radio Frequency Applications of Barium Strontium Titanate Thin Film
Properties of thin film barium strontium titanate (BST) based capacitors for RF and microwave components were studied. The capacitors were measured for their tunability, loss tangent,
Low voltage driven NiO thin film capacitors for tunable applications
Finally, NiO thin film capacitors annealed at 300 °C present the highest tunability (68.1% @100 kHz) under a small applied field of 82 kV/cm. Interlayer Dielectric Capacitors;
[PDF] Design and Fabrication of a Phase Shifter RFIC using a Tunable
The design and experimental evaluation of a very low voltage tunable capacitor is presented in this paper. Interdigital capacitors are designed and fabricated on high
SrTiO3 Thin Films on Dielectric Substrates for
Thin films of strontium titanate, which have nonlinear properties that are promising for microwave applications, were grown on a polycrystalline aluminum oxide substrate using magnetron sputtering and high-temperature
Ferroelectric Thin Films for Tunable Microwave Applications
film, the effect of film thickness and sintering temperature on their dielectric and tunable properties have been studied, for enhancing their tunable performance. The BST thin film with sintering at
A Novel Inter-Digital Tunable Capacitor for Low-Operation
the lossy BST and low tunable BZN thin-film, respectively. The tunable capacitors were fabricated on a quartz substrate in coplanar waveguide (CPW) configuration. The first metal
Very high tunable inter-digital capacitor using bismuth zinc
By alternatively depositing a high tunable BST ferroelectric and low-loss BZN paraelectric thin film dielectric, the multi-layer dielectric thin film of BZN/BST/BZN obtained a
The growth of bismuth-based cubic pyrochlore dielectric thin films
Due to this unique property, dielectric tunable thin films have been extensively investigated for microwave agile devices such as voltage-tunable capacitors, dynamic random
(Ba,Sr)TiO3 tunable capacitors with RF commutation quality
The fabrication, measurement, and modeling of radio-frequency (RF), tunable interdigital capacitors (IDCs) are described. High quality factors of 200 in the S/L-bands
(PDF) BST thin film capacitors integrated within a frequency tunable
The static value of the effective dielectric constant in a thin film capacitor is simulated by means of the local field theory. in both planarand out-of-plane tunable
Low voltage driven NiO thin film capacitors for tunable applications
NiO thin film capacitors annealed at 300 °C have the largest tunability of 68.1% @100 kHz under a low applied field (82 kV/cm). These imply that NiO thin film capacitors are
Structural and Electrical Properties of Barium Strontium Titanate Thin
dielectric constant and low cost makes barium strontium titanate (BST) a promising ferroelectric material for applications in tunable microwave devices. High tunability and low dielectric loss is
Ultra-tunable dielectric capacitors enhanced by coupling
Tunable ferroelectric film capacitors play an important role in tunable microwave devices and filter systems due to their high dielectric constant, low loss, and high
Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors
The nanocomposite dielectric film is compared to a VO 2 control layer and a VO 2 /SiO 2 superlattice to systematically investigate the influence of structure and geometry on
A tunable high-Q flexible ferroelectric film capacitor for
The flexible tunable capacitor retains its mechanical and electrical stability after 24 000 high-frequency bending cycles, which provides potential uses in bendable, collapsible tunable capacitors at the radio
Electrically tunable dielectric materials and strategies to improve
Dielectric measurement demonstrated that the ATN thin film exhibited promising tunable properties at 1 MHz and room temperature. Tunability of the films was dependent on
Fabrication and characterization of Ba1−xSr1−xTiO3 tunable thin film
Fabrication and characterization of Ba 1−x Sr 1−x TiO 3 tunable thin film capacitors. Author links open overlay panel Abdelkader Outzourhit a, John U. Trefny a [22]).
Low voltage tunable barium strontium titanate thin film capacitors
In this paper, we report on the fabrication and testing of thin film barium strontium titanate (BST) based capacitors for RF and microwave components. At 7 V DC
A High-Q Tunable Micromechanical Capacitor With Movable Dielectric
this movable dielectric design. III. TUNABLE-DIELECTRIC CAPACITOR DESIGN Via appropriate electrostatic analyses, approximate analytical expressions for capacitance C as a function of
Dielectric Varactor
Tecdia''s surface-mount dielectric varactors are made with a unique Tecdia proprietary voltage controllable dielectric and are designed for controlling impedance in a wide variety of
Ba0.6Sr0.4TiO3–Bi1.5Mg1.0Nb1.5O7 composite thin film capacitors
1. Introduction. The progress on miniaturization and integration of the microwave devices strongly depends on the ability to fabricate high quality tunable thin films
TUNABLE MICROWAVE INTEGRATED CIRCUITS USING BST THIN FILM CAPACITORS
ABSTRACT The mechanism of losses in barium strontium titanate (BST) thin film capacitors is analyzed at the device level. A geometry dependent RF model is used to
Composite Right/Left-Handed Leaky-Wave Antenna
This article presents a wide-angle-scanning leaky-wave antenna (LWA) based on a composite right/left-handed (CRLH) transmission line. In contrast to traditional semiconductor elements, thin-film ferroelectric capacitors
Recent development of lead-free relaxor ferroelectric and
The high energy storage performance of a dielectric capacitor strongly depends on factors such as remnant polarization (P r), maximum polarization (P max), and applied
Ultra-tunable dielectric capacitors enhanced by coupling
Here, we propose an ultra-tunable capacitor by designing a Ba 0.7 Sr 0.3 TiO 3 (BST)–semiconductor heterostructure. In the tunable capacitor, the BST film is fabricated
Low voltage tunable barium strontium titanate thin film capacitors
Thin film barium strontium titanate (BaxSr1-xTiO3), hereafter referred to as BSTO is a promising candidate for applications as tunable capacitors [1,2], tunable microwave
6 FAQs about [Thin film dielectric tunable capacitors]
Which type of capacitor is used for thin films?
Specifically for thin films, two types of capacitor configurations, parallel-plate capacitor and planar capacitor, are constructed in order to measure the dielectric properties of ferroelectric materials. Parallel-plate capacitors require bottom electrodes. Bottom electrodes are usually Pt if Si substrates are used.
What is the dielectric tunability of a thin film?
A dielectric tunability of 80% at 8 V/μm was obtained for the thin film. At microwave frequency, dielectric characterization revealed that the film had good dielectric properties and very low dielectric insertion loss over 10–30 GHz. However, the dielectric constant of the thin film seemed too high (1200 at 12.6 GHz) for many real applications.
Does 111 highly oriented thin film have high dielectric tunability?
High dielectric tunability ( η ∼ 80% at 1500 kV/cm) and high thermal stability (variation ∼ ±2% from RT to ∼ 450 K) were obtained in the (111) highly oriented thin film. Moreover, the (111) highly oriented thin film exhibits a high frequency stability of dielectric tunability.
What is flexible tunable capacitor?
The flexible tunable capacitor retains its mechanical and electrical stability after 24 000 high-frequency bending cycles, which provides potential uses in bendable, collapsible tunable capacitors at the radio frequency range. 1. ). 2. ). 3. Adv. Intell. Syst. ). 4. ACS Appl. Mater. Interfaces ).
What is the dielectric tunability of ATN thin film?
A varactor based ATN thin film of 0.4 μm in thickness on an Al 2 O 3 substrate had a dielectric tunability of 4.7% at 200 kV/cm, 20 GHz and a loss tangent of 0.068 . Fabrication and characterization of ATN ceramics and thick films for microwave applications were reported by Zimmermann et al. .
What is the dielectric performance of NKN thin films?
The NKN target was prepared by solid-state reaction and hot isostatic pressure sintering. Dielectric tunabilities of the thin films reported by Abadei et al. were 16, 13 and >10% at 10, 40 and 50 GHz, respectively. The authors believed that dielectric performances of the thin films could be further improved by optimizing the capacitor structures.