Indium phosphide solar cells: status and prospects for use in space
The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is
Indium phosphide solar cells | IET Conference Publication
One of the promising materials for space solar cells is the III-V semiconductor indium phosphide, which has shown good performance in both homojunction and heterojunction structures.
A short review of the electrochemical
Fabricating a pit array on the surface of indium phosphide wafer can change its photoelectric properties, improve its photoelectric conversion efficiency, and expand its
Effect of solar cell structure on the radiation
Comparison of np and pn Structures in Indium Phosphide Solar Cells. NASA Lewis Research . Center, USA, 1991. [13] Weinberg I. Radiation damage in InP solar cells.
Effect of solar cell structure on the radiation resistance of an InP
structure [12]. Since InP solar cells are promising for space indium phosphide solar cells under space conditions, and (ii) model the effects of 1 MeV electron irradiation on InP solar cells. 2 Numerical modeling Numerical simulations of InP solar cells have been carried out by using the finite element method in order to
Fraunhofer ISE Develops the World''s Most
The layer structure of the new solar cell was developed back in 2016 together with the French company Soitec Inc., that designs and manufactures innovative semiconductor
Effect of solar cell structure on the radiation
Numerical simulation was used to compare the radiation resistance and the performances of n/p and p/n solar cell structures for an Indium Phosphide (InP) solar cell. It was noted that the optimum n/p solar cell structure was more
Indium phosphide based solar cell using ultra-thin ZnO as
As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p + InP substrate and achieved an open-circuit voltage (Voc) and efficiency as high as 819 mV and
Indium phosphide solar cells: status and prospects for use in space
The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers
Indium phosphide based solar cell using ultra-thin ZnO as an
According to the Shockley-Queisser limit, the maximum achievable efficiency for a single junction solar cell is ∼33.2% which corresponds to a bandgap (E g) of 1.35 eV (InP).However, the maximum reported efficiency for InP solar cells remain at 24.2% ± 0.5%, that is >25% below the standard Shockley-Queisser limit.
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The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of in
Multi-junction solar cell
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials.Each material''s p–n junction will produce electric current in
NASA
INDIUM PHOSPHIDE SOLAR CELLS - STATUS AND PROSPECTS FOR USE IN SPACE Irving Weinberg and David J. Brinker National Aeronautics and Space Administration Lewis Research Center Cleveland, Ohio 44135 ABSTRACT The current status of indium phosphide cell research is reviewed and state of the art efficien-cies compared to those of GaAs and Si. is
Indium phosphide based solar cell using ultra-thin ZnO as an
As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p + InP substrate and achieved an open-circuit voltage (Voc) and efficiency as high as 819 mV and 18.12%, respectively,
Illumination Angle Insensitive Single Indium Phosphide Tapered
Low cost, high efficiency photovoltaic can help accelerate the adoption of solar energy. Using tapered indium phosphide nanopillars grown on a silicon substrate, we demonstrate a single nanopillar photovoltaic exhibiting illumination angle insensitive response. The photovoltaic employs a novel regrown core–shell p-i-n junction to improve device performance by
Modelling and Design of High Performance Indium Phosphide Solar Cells
Indium Phosphide Solar Cells Sandra L. Rhoads AstroPower Division/Astrosystems, Inc. Allen M. Barnett University of Delaware The widely accepted optimum design for InP solar cells is an n+/p/p+ structure offering a maximum open-circuit voltage of 902 mV for epitaxial structures [ref. 11. However, from first principles, open-circuit voltages
Indium phosphide based solar cells
In recent years, there has been considerable interest in the use of indium phosphide solar cells for applications in space. This is a result of the high performance
Indium phosphide based solar cell using ultra-thin ZnO as
This work lays the foundation for a new generation of thin film InP solar cells based solely on carrier selective heterojunctions without the requirement of extrinsic doping and can be
NASA
IN THE PAST, indium phosphide solar cells have been of interest largely because of their potential for terrestrial applications. Research activity was primarily directed toward structures
Texturing of Indium Phosphide for Improving the
A short-circuit current density of 40.1 mA/cm2, determined from external quantum efficiency, is demonstrated for a textured SHJ solar cell with an In2O3:H window electrode, compared to 38.5 mA/cm2
Heliyon
For planar structures, a large amount of incident light is reflected away from the surface, limiting the solar energy conversion efficiency. Therefore, in order to improve the light conversion efficiency of solar cells, it is necessary to reduce the light reflectivity on
Indium Phosphide Solar Cells: a Materials Growth Study.
The objective of this research was the fabrication and optimization of InP material to improve solar cells for space applications. The performance of solar cells is determined to a large extent by the quality of the material used to fabricate these structures. For the n ^+pp^+ cells used here, the important material properties are: lifetime in the p-type base, and dopant incorporation and
Fraunhofer ISE, AMOLF reveal details of record
The two research institutes described the triple junction device''s features in a new paper. The cell relies on a top cell based on gallium indium phosphide (GaInP), a middle cell relying on
Tunable graphene/indium phosphide heterostructure solar cells
Request PDF | On Mar 23, 2015, Peng Wang and others published Tunable graphene/indium phosphide heterostructure solar cells | Find, read and cite all the research you need on ResearchGate
Calculated performance of indium phosphide solar cells under
The performance of an experimental, high-efficiency, n/sup +/p InP solar cell under monochromatic illumination has been modeled. The cell modeling gives a peak efficiency in excess of 44% at 0.87 mu m and 25 degrees C. The effect of cell series resistance on its performance has also been studied. Calculated efficiencies for an optimized InP cell are in
Illumination Angle Insensitive Single Indium Phosphide Tapered
Silicon nanopillars and their ordered arrays are attractive structures for solar cell applications. Identifying the suitable geometry, for achieving an optimum antireflection property along with the formation of radial junctions, is presented in this paper. In this paper, we demonstrate a single-crystalline indium phosphide (InP) nanopillar
Evaluating Electronic Properties of Self‐Assembled Indium Phosphide
The calculated density of states reveals large-sized porous (InP) 12n nanosheets and nanowires with narrow pore size distribution and slight thickness and a large surface area manifest ultrahigh specific capacitance of trapping solar light energies and high light-to-electricity conversion efficiencies in solar energy absorption or conversion or photovoltaicsm.
Indium gallium phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.. It is used mainly in HEMT and HBT structures,
Effect of solar cell structure on the radiation resistance of an InP
Developments have also been focused on Indium Phosphide solar cells (InP) for the reason that their radiation tolerance surpasses that of the GaAs and Si ones as reported in variant studies [1,3,4].
Indium phosphide magic-sized clusters: chemistry and applications
Indium phosphide (InP) QDs are direct mobility in nanomaterial devices such as field-effect transistors and solar cells 111. crystal and electronic structure of a 1.3 nm indium phosphide
Indium phosphide | InP | CID 31170
Indium phosphide | InP | CID 31170 - structure, chemical names, physical and chemical properties, classification, patents, literature, biological activities, safety/hazards/toxicity information, supplier lists, and
Effect of solar cell structure on the radiation resistance of an InP
Conclusion Numerical simulation was used to compare the radiation resistance and the performances of n/p and p/n solar cell structures for an Indium Phosphide (InP) solar cell. It was noted that the optimum n/p solar cell structure was more efficacious than the optimum p/n solar cell structure on account of a larger shortcurrent density which is in agreement with the
Indium phosphide based solar cell using ultra-thin ZnO as
Amongst single junction solar cells, maximum efficiency of 28.8% ± 0.9% has been reported for thin film GaAs solar cells [5]. However, despite InP being theoretically the most suitable candidate for single junction solar cells, its reported Journal of Physics D: Applied Physics Indium phosphide based solar cell using
Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells
Download Citation | Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells | Window layers help in reducing the surface recombination at the emitter surface of the solar cells
Indium phosphide solar cells
The ideal solar cells for use in space have a high power to mass ratio and a high resistance to radiation. To date, flat panels using cells based on single crys
Design and Simulation of GaAs/InP and Si/SiC Heterojunction Solar Cells
Furthermore, solar cell structure is simulated in 1D. The geometry and interval can be varying according to the requirement. In this research work, we select a heterojunction solar cell, which is varying between two intervals, i.e., one from −10 to 0 and another is 0 to 10. InP is considered to be environment friendly. Indium phosphide is
Highly Photoconductive InP Quantum Dots
InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to
High-Efficiency Indium Tin Oxide/Indium
Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited n‐ITO onto an epitaxial p/p<sup>+</sup
Indium phosphide solar cells: status and prospects for use in
The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers
6 FAQs about [Indium Phosphide Solar Cell Structure]
Are in Dium phosphide window layers suitable for space power applications?
The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of in- dium phosphide (InP) window layers for lattice-matched In 0.53Ga 0.47As (bandgap energy 0.74 eV) solar cells.
Is indium gallium arsenide a good material for solar cells?
Indium gallium arsenide (In and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell ap- proaches.
What is ITO/ZnO/I-INP solar cell?
As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p InP substrate and achieved an open-circuit voltage () and efficiency as high as 819 mV and 18.12%, respectively, along with ~90% internal quantum efficiency. The entire device fabrication process consists of four simple steps which are highly controllable and reproducible.
Do P-type phosphide window layers suit lattice-matched InGaAs solar cells?
This work investigates the suitability of in- dium phosphide (InP) window layers for lattice-matched In 0.53Ga 0.47As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells.
What is indium gallium arsenide?
Indium gallium arsenide (In xGa 1-xAs) material has been used widely in several state-of-the-art elec- tronic and optoelectronic devices. In xGa 1-xAs and related materials based solar cells are quite promis- ing for photovoltaic (PV) and thermophotovoltaic (TPV) applications .
Can InGaAs cells be used in multi-bandgap solar cells?
These developments were intended for the use of InGaAs cells in multi-bandgap energy, multi-junction solar cell approaches. Two-junction monolithic InP/InGaAs tandem cells grown on InP substrates have demonstrated AM0 1- sun efficiencies over 22% . Figure 1.