AlSb thin-film solar cell consisting of p-type AlSb was prepared on n-type Si substrate by using thermal evaporation. The effect of the preparation and partial replacement of Aluminum with Indium
The present work proposes a reliable idea of using an alternate material such as Antimony Chalcogenide (Sb 2 Ch 3; Ch = O, S, Se, Te) which substantially has been used as
Matching the photocurrent between the two sub-cells in a perovskite/silicon monolithic tandem solar cell by using a bandgap of 1.64 eV for the top cell results in a high tandem Voc of 1.80 V and
The search for an ideal absorber layer in thin-film solar cells seems to be a never-ending task. Apart from the solar absorber characteristics, antimony chalcogenide
throughput. In the composition of a solar cell, window layer material provides a fateful job to enhance the efficiency of a solar cell [28]. Aluminium antimonide (AlSb) could be a spanking option as a window layer in AIT-based thin film solar cell. AlSb is a part of group III-V material having a bandgap of 1.6 eV at a temperature of 300 K [29].
Between 2014 and 2030, the market share of c-Si solar cells is expected to drop from 92 to 44.8%. Over the same period, thin-film solar cells are expected to increase by 44.1%, from a base of 1% in 2014 [1, 2].The motivation behind this shift is the increasing need for applications that are lighter, more flexible, and can be integrated into buildings.
Thin-film solar cells are produced through the deposition of one or more thin layers (referred to as thin films or TFs) of photovoltaic material onto a substrate. The most common substrates are
The thin film specimen consisted of a 600 nm thin layer of zinc-antimonide deposited by magnetron co-sputtering on a 350 µm thick glass substrate. The proposed device configurations generate peak power of 3.5 μW and 13.5 μW at hot side temperatures of
Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se2- and CdTe-based photovoltaic technologies. Recently, several
The invention discloses an aluminum antimonide thin film solar cell, wherein the hetero PN junction consists of n-CdS and p-AlSb, an absorption layer is AlSb, a buffer layer is CdTe, and...
We report a numerical simulation based design and optimization of single-junction gallium antimonide (GaSb) solar cell using the two-dimensional device simulator (SILVACO-ATLAS) under AM1.5G spectrum. We considered the gallium antimonide (GaSb) material as the absorber layer because of its low band gap and silicon (Si) as the substrate layer. Previously
The chemical composition and crystal structure highly influence the optical properties of Sb 2 Se 3.According to most of the reports, the band gap of polycrystalline Sb 2 Se 3 thin films ranges from 1.0 eV to 1.3 eV. According to Chen et al. [13], at 300 K, the indirect band gap of polycrystalline Sb 2 Se 3 is 1.03 ± 0.01 eV, and the direct band gap is 1.17 ± 0.02 eV.
The most common solar PV technology, crystalline silicon (c-Si) cells, is frequently mentioned when discussing solar energy materials. Thin film solar cells are a
Thin-film GaAs/GaSb solar cell materials potentially have higher intrinsic resilience to space radiation damage. High-current solar cells based on gallium antimonide and intended for use in
In the composition of a solar cell, window layer material provides a fateful job to enhance the efficiency of a solar cell [28]. Aluminium antimonide (AlSb) could be a spanking option as a window layer in AIT-based thin film solar cell. AlSb is a part of group III-V material having a bandgap of 1.6 eV at a temperature of 300 K [29]. Moreover
@article{osti_21088655, title = {High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide}, author = {Khvostikov, V. P., E-mail: [email protected] and Rastegaeva, M G and Khvostikova, O A and Sorokina, S V and Malevskaya, A V and Shvarts, M Z and Andreev, A N and Davydov, D V and Andreev, V M},
Antimony-based thin film solar cells, particularly those utilizing antimony sulfide (Sb 2 S 3), have garnered significant attention in the renewable energy sector due to their potential for...
The invention discloses an aluminum antimonide thin film solar cell, wherein a heterogeneous PN junction is composed of n-CdS and p-AlSb, an absorption layer is AlSb, a buffer layer is CdTe, and a back contact layer is ZnTe: and (3) Cu. After the preparation method disclosed by the invention is adopted, the thickness of the absorption layer AlSb reaches 800nm, the
By decreasing the width of individual cells in traditional monolithically integrated thin-film modules, the loss of series resistance may be efficiently reduced. Alternatively, the process of integrating individual substrate cells that is currently utilized for flexible CIGS solar cells may be modified to produce bifacial PSCs [67]. However, it
Thin-film solar cells are a type of solar cell made by depositing one or more thin layers (thin films or TFs) of photovoltaic material onto a substrate, such as glass, plastic or metal. Thin-film
Bulk Heterojunction Antimony Selenosulfide Thin-Film Solar Cells with Efficient Charge Extraction and Suppressed Recombination. Ru Zhou, Corresponding Author. Ru Zhou [email protected] In this work, BHJ Sb 2
Antimony selenide (Sb 2 Se 3) has demonstrated considerable potential and advancement as a light-absorbing material for thin-film solar cells owing to its exceptional optoelectronic characteristics. However, challenges persist in the crystal growth, particularly regarding the nucleation mechanism during pre-selenization process for Sb 2 Se 3 .
1 Theoretical simulation and design of AlSb thin films solar cells* Huijin Songa, Zilong Wanga,Jingwen Wanga,Qiang Yana,b*,Xia Kaia, Xiangfeng Denga, Minqiang Lic a College of Mechanical Engineering,Chengdu University,Chengdu 610106,China; b Sichuan Yuqiang Science and Technology Co., Ltd.,Mianzhu 618200,China; c School of Electronic
Antimony selenide (Sb 2 Se 3) has demonstrated considerable potential and advancement as a light-absorbing material for thin-film solar cells owing to its exceptional
A near-field thermophotovoltaic system with a tandem-cell structure theoretically achieved electrical power of 468 kW/m2 and an efficiency of 41% at a vacuum gap of 50 nm. Near-Field Thermophotovoltaic Energy
Optimization of Efficient and Stable Aluminium Antimonide Compound Solar Cells Mrinmoy Dey1, 2*, Rishita Chakma1, U.Aimon1, for thin film technology to further improve the
Solar Energy Materials and Solar Cells. Volume 203, Indium antimonide photovoltaic cells are specifically designed and fabricated for use in a near-field thermophotovoltaic device demonstrator. Thermal energy conversion using near-field thermophotovoltaic device composed of a thin-film tungsten radiator and a thin-film silicon cell.
Recently, thermophotovoltaics (TPVs) have emerged as a promising and scalable energy conversion technology. However, the optical materials and structures
Sb2Se3 thin films are proposed as an alternative light harvester for semiconductor sensitized solar cells. An innovative electrodeposition route, based on aqueous alkaline electrolytes, is presented to obtain amorphous
The solar cells based on the CsBi 2.7 Sb 0.3 I 10 film show a remarkably improved power conversion efficiency of 0.82% compared to that of pristine CBI (0.22%), which is among the highest reported efficiencies for CBI
Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates.
Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain...
The invention discloses an aluminum antimonide thin film solar cell, wherein the hetero PN junction consists of n-CdS and p-AlSb, an absorption layer is AlSb, a buffer layer is CdTe, and a back contact layer is ZnTe: cu. After the preparation of the invention, the thickness of the absorption layer AlSb reaches 800nm, so that the photo-generated current density is
AlSb thin films have been fabricated by the DC magnetron sputtering for the potential application in high efficiency solar cells. Al and Sb targets were co-sputtered at different powers to make
Inverted metamorphic solar cells play an important role in the field of photovoltaics, because it can directly grow stacked tandem junctions with different bandgaps according to the spectrum.
Flexible thin-film solar cells can be attached to the roof and exterior of a house, providing significant absorption of solar energy. Aluminum antimonide (AlSb) is an important III-V compound semiconductor with an indirect band gap of 1.62 eV, which closely matches the spectrum of visible light [1]. Therefore, AlSb is very suitable for use as
The search for an ideal absorber layer in thin-film solar cells seems to be a never-ending task. Apart from the solar absorber characteristics, antimony chalcogenide materials are gaining research interest predominantly due to their ribbon orientation and bandgap tunability in the entire solar spectrum.
, ZnS, and ZnSe with the thickness of 40 nm. The modelled structure with optimized thickness (2 μm&2.5 μm) resulted in higher efficiency (∼22 %) antimony chalcogenide thin film solar cells. 1.
However, the highest power conversion efficiency (PCE) of Sb 2 Se 3 thin film solar cells with a CdS/Sb 2 Se 3 superstrate configuration is so far 5.6% 2, 4, 5, 6, 7, 8, 9, 10, 11, and with a ZnO/Sb 2 Se 3 superstrate configuration 5.93% 1.
Sci. Technol. 31 063001 Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb 2 Se 3, SnS, FeS 2, CuSbS 2 and CuSbSe 2.
Cite this: ACS Appl. Mater. Interfaces 2014, 6, 4, 2836–2841 Sb 2 Se 3 thin films are proposed as an alternative light harvester for semiconductor sensitized solar cells. An innovative electrodeposition route, based on aqueous alkaline electrolytes, is presented to obtain amorphous Sb 2 Se 3.
The potential of the Sb 2 Se 3 electrodeposited thin films in semiconductor sensitized solar cells is evaluated by preparing TiO 2 /Sb 2 Se 3 /CuSCN planar heterojunction solar cells. The resulting devices generate electricity from the visible and NIR photons, exhibiting the external quantum efficiency onset close to 1050 nm.
We are deeply committed to excellence in all our endeavors.
Since we maintain control over our products, our customers can be assured of nothing but the best quality at all times.